IEDM2012, San Francisco, USA - December 12, 2012 - At this week’s IEEE International Electron Devices Meeting (IEDM 2012), imec addressed key challenges of scaling beyond silicon-channel finFETs. Imec showed that channel mobility can be boosted by growing non-Si channels on a strain relaxed buffer (SRB), and demonstrated excellent scalability potential of the technology.

Leuven (Belgium) – November 26, 2012 – Imec and Holst Centre announced today that they will present nine papers at the 60th International Solid-State Circuits Conference (ISSCC), February 20-24, 2013 in San Francisco. ISSCC is the foremost global forum on advancements in solid-state circuits and systems on a chip (SOCs).

Leuven (Belgium) – October 10, 2011 – Imec realized an integrated poly-SiGe-based piezoresistive pressure sensor directly fabricated above 0.13 µm copper (Cu) -backend CMOS technology. This represents not only the first integrated poly-SiGe pressure sensor directly fabricated above its readout circuit, but also the first time that a poly-SiGe MEMS device is processed on top of Cu-backend CMOS.

Leuven (Belgium) – October 10, 2011 – Imec developed a reconfigurable receiver for highly diversified digital video broadcasting standards (DVB-T, ISDB-T and ATSC). The receiver is realized using algorithm-architecture co-optimization of imec’s reconfigurable processor ADRES. The solution combines better area efficiency than reference dedicated ASICs with state-of-the-art performance.