Leuven (Belgium) – October 10, 2011 – Imec realized an integrated poly-SiGe-based piezoresistive pressure sensor directly fabricated above 0.13 µm copper (Cu) -backend CMOS technology. This represents not only the first integrated poly-SiGe pressure sensor directly fabricated above its readout circuit, but also the first time that a poly-SiGe MEMS device is processed on top of Cu-backend CMOS.